|
RF Micro Devices(R) Expands Family of GaN Unmatched Power Transistors |
RFMD's High-Efficiency RF3932 Power Transistor Delivers Superior Performance Versus GaAs and Silicon Technologies
RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies has announced that RFMD® has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.
|
|
Read more... |